DMN10H220LVT-13

Manufacturer
Manufacturer Product Number
DMN10H220LVT-13
Description
MOSFET N-CH 100V 1.87A TSOT26
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
DMN10H220LVT-13 Models
Product Attributes
Type
Description
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
1.87A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
220mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.3 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
401 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.67W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TSOT-26
Package / Case
SOT-23-6 Thin, TSOT-23-6
In-Stock: Contact for stock
Can ship immediately
All prices are in USD
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