EPC2007C

Manufacturer
EPC
Manufacturer Product Number
EPC2007C
Description
GANFET N-CH 100V 6A DIE OUTLINE
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
EPC2007C Models
Product Attributes
Type
Description
Product Status
Active
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
30mOhm @ 6A, 5V
Vgs(th) (Max) @ Id
2.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs
2.2 nC @ 5 V
Vgs (Max)
+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds
220 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Die Outline (5-Solder Bar)
Package / Case
Die
In-Stock: 7,948
Can ship immediately
All prices are in USD
Cut Tape (CT) & Digi-Reel®
Quantity Unit Price Ext Price