FDFMA2P853T

Manufacturer
Manufacturer Product Number
FDFMA2P853T
Description
MOSFET P-CH 20V 3A MICROFET
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
FDFMA2P853T Models
Product Attributes
Type
Description
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
120mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id
1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
435 pF @ 10 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
1.4W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-MicroFET (2x2)
Package / Case
6-VDFN Exposed Pad
In-Stock: 7,948
Can ship immediately
All prices are in USD
Cut Tape (CT) & Digi-Reel®
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