FDMA1025P

Manufacturer
Manufacturer Product Number
FDMA1025P
Description
POWER FIELD-EFFECT TRANSISTOR, 3
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
FDMA1025P Models
Product Attributes
Type
Description
Product Status
Active
FET Type
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
3.1A
Rds On (Max) @ Id, Vgs
155mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
450pF @ 10V
Power - Max
700mW
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-VDFN Exposed Pad
Supplier Device Package
6-MicroFET (2x2)
In-Stock: 7,948
Can ship immediately
All prices are in USD
Cut Tape (CT) & Digi-Reel®
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