NDH832P

Manufacturer
Manufacturer Product Number
NDH832P
Description
MOSFET P-CH 20V 4.2A SUPERSOT8
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
NDH832P Models
Product Attributes
Type
Description
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V
Rds On (Max) @ Id, Vgs
60mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 4.5 V
Vgs (Max)
-8V
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SuperSOT™-8
Package / Case
8-TSOP (0.130", 3.30mm Width)
In-Stock: 7,948
Can ship immediately
All prices are in USD
Cut Tape (CT) & Digi-Reel®
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