G2R120MT33J

Manufacturer
Manufacturer Product Number
G2R120MT33J
Description
SIC MOSFET N-CH TO263-7
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
G2R120MT33J Models
Product Attributes
Type
Description
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
3300 V
Current - Continuous Drain (Id) @ 25°C
35A
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
156mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
145 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
3706 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263-7
Package / Case
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
In-Stock: 265
Can ship immediately
All prices are in USD
Cut Tape (CT) & Digi-Reel®
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