G3R40MT12J

Manufacturer
Manufacturer Product Number
G3R40MT12J
Description
SIC MOSFET N-CH 75A TO263-7
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
G3R40MT12J Models
Product Attributes
Type
Description
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
48mOhm @ 35A, 15V
Vgs(th) (Max) @ Id
2.69V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
106 nC @ 15 V
Vgs (Max)
±15V
Input Capacitance (Ciss) (Max) @ Vds
2929 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
374W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263-7
Package / Case
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
In-Stock: 7,948
Can ship immediately
All prices are in USD
Cut Tape (CT) & Digi-Reel®
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