G3R45MT17D

Manufacturer
Manufacturer Product Number
G3R45MT17D
Description
SIC MOSFET N-CH 61A TO247-3
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
G3R45MT17D Models
Product Attributes
Type
Description
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25°C
61A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
58mOhm @ 40A, 15V
Vgs(th) (Max) @ Id
2.7V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
182 nC @ 15 V
Vgs (Max)
±15V
Input Capacitance (Ciss) (Max) @ Vds
4523 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
438W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
In-Stock: 7,948
Can ship immediately
All prices are in USD
Cut Tape (CT) & Digi-Reel®
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