BSP149H6327XTSA1

Manufacturer
Manufacturer Product Number
BSP149H6327XTSA1
Description
MOSFET N-CH 200V 660MA SOT223-4
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
BSP149H6327XTSA1 Models
Product Attributes
Type
Description
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
660mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
0V, 10V
Rds On (Max) @ Id, Vgs
1.8Ohm @ 660mA, 10V
Vgs(th) (Max) @ Id
1V @ 400µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
430 pF @ 25 V
FET Feature
Depletion Mode
Power Dissipation (Max)
1.8W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT223-4
Package / Case
TO-261-4, TO-261AA
In-Stock: 7,948
Can ship immediately
All prices are in USD
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