BSZ100N06LS3GATMA1

Manufacturer
Manufacturer Product Number
BSZ100N06LS3GATMA1
Description
MOSFET N-CH 60V 11A/20A 8TSDSON
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
BSZ100N06LS3GATMA1 Models
Product Attributes
Type
Description
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
11A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
10mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.2V @ 23µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3500 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
2.1W (Ta), 50W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TSDSON-8
Package / Case
8-PowerVDFN
In-Stock: Contact for stock
Can ship immediately
All prices are in USD
Cut Tape (CT) & Digi-Reel®
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