Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
F423MR12W1M1B76BPSA1 |
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Manufacturer
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Manufacturer Product Number
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F423MR12W1M1B76BPSA1
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Description
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MOSFET MODULE
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Manufacturer Standard Lead Time
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7 Weeks
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Detailed Description
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Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
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Datasheet
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Datasheet |
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EDA/CAD Models
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F423MR12W1M1B76BPSA1 Models |
Product Attributes
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Type
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Description
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Product Status
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Obsolete
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FET Type
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4 N-Channel (Half Bridge)
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FET Feature
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Silicon Carbide (SiC)
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Drain to Source Voltage (Vdss)
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1200V (1.2kV)
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Current - Continuous Drain (Id) @ 25°C
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45A (Tj)
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Rds On (Max) @ Id, Vgs
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22.5mOhm @ 50A, 15V
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Vgs(th) (Max) @ Id
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5.55V @ 20mA
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Gate Charge (Qg) (Max) @ Vgs
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124nC @ 15V
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Input Capacitance (Ciss) (Max) @ Vds
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3.68nF @ 800V
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Power - Max
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-
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Operating Temperature
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-40°C ~ 150°C (TJ)
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Mounting Type
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Chassis Mount
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Package / Case
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Module
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Supplier Device Package
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AG-EASY1B-2
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In-Stock: Contact for stock
Can ship immediately
Quantity
For Use With
