IMBG120R220M1HXTMA1

Manufacturer
Manufacturer Product Number
IMBG120R220M1HXTMA1
Description
SICFET N-CH 1.2KV 13A TO263
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
IMBG120R220M1HXTMA1 Models
Product Attributes
Type
Description
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
294mOhm @ 4A, 18V
Vgs(th) (Max) @ Id
5.7V @ 1.6mA
Gate Charge (Qg) (Max) @ Vgs
9.4 nC @ 18 V
Vgs (Max)
+18V, -15V
Input Capacitance (Ciss) (Max) @ Vds
312 pF @ 800 V
FET Feature
Standard
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-7-12
Package / Case
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
In-Stock: Contact for stock
Can ship immediately
All prices are in USD
Cut Tape (CT) & Digi-Reel®
Quantity Unit Price Ext Price