Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IPB017N10N5LFATMA1 |
|
|---|---|
|
Manufacturer
|
|
|
Manufacturer Product Number
|
IPB017N10N5LFATMA1
|
|
Description
|
MOSFET N-CH 100V 180A TO263-7
|
|
Manufacturer Standard Lead Time
|
7 Weeks
|
|
Detailed Description
|
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
|
|
Datasheet
|
Datasheet |
|
EDA/CAD Models
|
IPB017N10N5LFATMA1 Models |
Product Attributes
|
Type
|
Description
|
|
|---|---|---|
|
Product Status
|
Active
|
|
|
FET Type
|
N-Channel
|
|
|
Technology
|
MOSFET (Metal Oxide)
|
|
|
Drain to Source Voltage (Vdss)
|
100 V
|
|
|
Current - Continuous Drain (Id) @ 25°C
|
180A (Tc)
|
|
|
Drive Voltage (Max Rds On, Min Rds On)
|
10V
|
|
|
Rds On (Max) @ Id, Vgs
|
1.7mOhm @ 100A, 10V
|
|
|
Vgs(th) (Max) @ Id
|
4.1V @ 270µA
|
|
|
Gate Charge (Qg) (Max) @ Vgs
|
195 nC @ 10 V
|
|
|
Vgs (Max)
|
±20V
|
|
|
Input Capacitance (Ciss) (Max) @ Vds
|
840 pF @ 50 V
|
|
|
FET Feature
|
-
|
|
|
Power Dissipation (Max)
|
313W (Tc)
|
|
|
Operating Temperature
|
-55°C ~ 150°C (TJ)
|
|
|
Mounting Type
|
Surface Mount
|
|
|
Supplier Device Package
|
PG-TO263-7
|
|
|
Package / Case
|
TO-263-7, D²Pak (6 Leads + Tab)
|
In-Stock: Contact for stock
Can ship immediately
Quantity
For Use With
