IPB020N04NGATMA1

Manufacturer
Manufacturer Product Number
IPB020N04NGATMA1
Description
MOSFET N-CH 40V 140A TO263-7
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
IPB020N04NGATMA1 Models
Product Attributes
Type
Description
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
140A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 95µA
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
9700 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
167W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-7-3
Package / Case
TO-263-7, D²Pak (6 Leads + Tab)
In-Stock: 7,948
Can ship immediately
All prices are in USD
Cut Tape (CT) & Digi-Reel®
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