IPSA70R950CEAKMA1

Manufacturer
Manufacturer Product Number
IPSA70R950CEAKMA1
Description
MOSFET N-CH 700V 8.7A TO251-3
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
IPSA70R950CEAKMA1 Models
Product Attributes
Type
Description
Product Status
Discontinued at Digi-Key
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
700 V
Current - Continuous Drain (Id) @ 25°C
8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
950mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
15.3 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
328 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
94W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3-347
Package / Case
TO-251-3 Stub Leads, IPak
In-Stock: 7,948
Can ship immediately
All prices are in USD
Cut Tape (CT) & Digi-Reel®
Quantity Unit Price Ext Price