Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IPT60R080G7XTMA1 |
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Manufacturer
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Manufacturer Product Number
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IPT60R080G7XTMA1
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Description
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MOSFET N-CH 650V 29A 8HSOF
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Manufacturer Standard Lead Time
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7 Weeks
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Detailed Description
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Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
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Datasheet
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Datasheet |
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EDA/CAD Models
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IPT60R080G7XTMA1 Models |
Product Attributes
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Type
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Description
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Product Status
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Active
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FET Type
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N-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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650 V
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Current - Continuous Drain (Id) @ 25°C
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29A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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10V
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Rds On (Max) @ Id, Vgs
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80mOhm @ 9.7A, 10V
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Vgs(th) (Max) @ Id
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4V @ 490µA
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Gate Charge (Qg) (Max) @ Vgs
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42 nC @ 10 V
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) @ Vds
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1640 pF @ 400 V
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FET Feature
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-
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Power Dissipation (Max)
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167W (Tc)
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Operating Temperature
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-40°C ~ 150°C (TJ)
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Mounting Type
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Surface Mount
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Supplier Device Package
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PG-HSOF-8-2
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Package / Case
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8-PowerSFN
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In-Stock: 435
Can ship immediately
Quantity
For Use With
