IPT65R195G7XTMA1

Manufacturer
Manufacturer Product Number
IPT65R195G7XTMA1
Description
MOSFET N-CH 650V 14A 8HSOF
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
IPT65R195G7XTMA1 Models
Product Attributes
Type
Description
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
195mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id
4V @ 240µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
996 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
97W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-HSOF-8-2
Package / Case
8-PowerSFN
In-Stock: 7,948
Can ship immediately
All prices are in USD
Cut Tape (CT) & Digi-Reel®
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