SPW55N80C3FKSA1

Manufacturer
Manufacturer Product Number
SPW55N80C3FKSA1
Description
MOSFET N-CH 800V 54.9A TO247-3
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
SPW55N80C3FKSA1 Models
Product Attributes
Type
Description
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
54.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
85mOhm @ 32.6A, 10V
Vgs(th) (Max) @ Id
3.9V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs
288 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7520 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
500W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3
Package / Case
TO-247-3
In-Stock: Contact for stock
Can ship immediately
All prices are in USD
Cut Tape (CT) & Digi-Reel®
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