Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
VWM200-01P |
|
|---|---|
|
Manufacturer
|
|
|
Manufacturer Product Number
|
VWM200-01P
|
|
Description
|
MOSFET 6N-CH 100V 210A V2
|
|
Manufacturer Standard Lead Time
|
7 Weeks
|
|
Detailed Description
|
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
|
|
Datasheet
|
Datasheet |
|
EDA/CAD Models
|
VWM200-01P Models |
Product Attributes
|
Type
|
Description
|
|
|---|---|---|
|
Product Status
|
Obsolete
|
|
|
FET Type
|
6 N-Channel (3-Phase Bridge)
|
|
|
FET Feature
|
Standard
|
|
|
Drain to Source Voltage (Vdss)
|
100V
|
|
|
Current - Continuous Drain (Id) @ 25°C
|
210A
|
|
|
Rds On (Max) @ Id, Vgs
|
5.2mOhm @ 100A, 10V
|
|
|
Vgs(th) (Max) @ Id
|
4V @ 2mA
|
|
|
Gate Charge (Qg) (Max) @ Vgs
|
430nC @ 10V
|
|
|
Input Capacitance (Ciss) (Max) @ Vds
|
-
|
|
|
Power - Max
|
-
|
|
|
Operating Temperature
|
-40°C ~ 175°C (TJ)
|
|
|
Mounting Type
|
Chassis Mount
|
|
|
Package / Case
|
V2-PAK
|
|
|
Supplier Device Package
|
V2-PAK
|
In-Stock: Contact for stock
Can ship immediately
Quantity
For Use With
