Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
3N170 TO-72 4L |
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Manufacturer
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Manufacturer Product Number
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3N170 TO-72 4L
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Description
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N-CHANNEL ENHANCEMENT MODE MOSFE
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Manufacturer Standard Lead Time
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7 Weeks
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Detailed Description
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Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
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Datasheet
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Datasheet |
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EDA/CAD Models
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3N170 TO-72 4L Models |
Product Attributes
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Type
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Description
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Product Status
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Active
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FET Type
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N-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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25 V
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Current - Continuous Drain (Id) @ 25°C
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30mA
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Drive Voltage (Max Rds On, Min Rds On)
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10V
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Rds On (Max) @ Id, Vgs
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200Ohm @ 100µA, 10V
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Vgs(th) (Max) @ Id
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2V @ 10µA
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Gate Charge (Qg) (Max) @ Vgs
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-
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Vgs (Max)
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±35V
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Input Capacitance (Ciss) (Max) @ Vds
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-
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FET Feature
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-
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Power Dissipation (Max)
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300mW
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Operating Temperature
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-55°C ~ 135°C (TJ)
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Mounting Type
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Through Hole
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Supplier Device Package
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TO-72-4
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Package / Case
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TO-206AF, TO-72-4 Metal Can
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In-Stock: 7,948
Can ship immediately
Quantity
All prices are
in USD
Cut Tape (CT) & Digi-Reel®
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For Use With
