Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
APTM100H46FT3G |
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Manufacturer
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Manufacturer Product Number
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APTM100H46FT3G
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Description
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MOSFET 4N-CH 1000V 19A SP3
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Manufacturer Standard Lead Time
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7 Weeks
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Detailed Description
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Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
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Datasheet
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Datasheet |
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EDA/CAD Models
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APTM100H46FT3G Models |
Product Attributes
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Type
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Description
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Product Status
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Active
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FET Type
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4 N-Channel (Half Bridge)
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FET Feature
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Standard
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Drain to Source Voltage (Vdss)
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1000V (1kV)
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Current - Continuous Drain (Id) @ 25°C
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19A
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Rds On (Max) @ Id, Vgs
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552mOhm @ 16A, 10V
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Vgs(th) (Max) @ Id
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5V @ 2.5mA
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Gate Charge (Qg) (Max) @ Vgs
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260nC @ 10V
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Input Capacitance (Ciss) (Max) @ Vds
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6800pF @ 25V
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Power - Max
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357W
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Operating Temperature
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-40°C ~ 150°C (TJ)
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Mounting Type
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Chassis Mount
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Package / Case
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SP3
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Supplier Device Package
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SP3
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In-Stock: Contact for stock
Can ship immediately
Quantity
For Use With
