APTM10UM01FAG

Manufacturer
Manufacturer Product Number
APTM10UM01FAG
Description
MOSFET N-CH 100V 860A SP6
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
APTM10UM01FAG Models
Product Attributes
Type
Description
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
860A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.6mOhm @ 275A, 10V
Vgs(th) (Max) @ Id
4V @ 12mA
Gate Charge (Qg) (Max) @ Vgs
2100 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
60000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2500W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SP6
Package / Case
SP6
In-Stock: 7,948
Can ship immediately
All prices are in USD
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