APTM120H140FT1G

Manufacturer
Manufacturer Product Number
APTM120H140FT1G
Description
MOSFET 4N-CH 1200V 8A SP1
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
APTM120H140FT1G Models
Product Attributes
Type
Description
Product Status
Active
FET Type
4 N-Channel (Half Bridge)
FET Feature
Standard
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
8A
Rds On (Max) @ Id, Vgs
1.68Ohm @ 7A, 10V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
145nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
3812pF @ 25V
Power - Max
208W
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
SP1
Supplier Device Package
SP1
In-Stock: 7,948
Can ship immediately
All prices are in USD
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