DN3765K4-G

Manufacturer
Manufacturer Product Number
DN3765K4-G
Description
MOSFET N-CH 650V 300MA TO252-3
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
DN3765K4-G Models
Product Attributes
Type
Description
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
300mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)
0V
Rds On (Max) @ Id, Vgs
8Ohm @ 150mA, 0V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
825 pF @ 25 V
FET Feature
Depletion Mode
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252, (D-Pak)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
In-Stock: 7,948
Can ship immediately
All prices are in USD
Cut Tape (CT) & Digi-Reel®
Quantity Unit Price Ext Price