Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
VP2206N2 |
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Manufacturer
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Manufacturer Product Number
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VP2206N2
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Description
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MOSFET P-CH 60V 750MA TO39
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Manufacturer Standard Lead Time
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7 Weeks
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Detailed Description
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Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
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Datasheet
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Datasheet |
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EDA/CAD Models
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VP2206N2 Models |
Product Attributes
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Type
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Description
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Product Status
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Active
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FET Type
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P-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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60 V
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Current - Continuous Drain (Id) @ 25°C
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750mA (Tj)
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Drive Voltage (Max Rds On, Min Rds On)
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5V, 10V
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Rds On (Max) @ Id, Vgs
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900mOhm @ 3.5A, 10V
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Vgs(th) (Max) @ Id
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3.5V @ 10mA
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Gate Charge (Qg) (Max) @ Vgs
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-
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) @ Vds
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450 pF @ 25 V
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FET Feature
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-
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Power Dissipation (Max)
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360mW (Tc)
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Operating Temperature
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-55°C ~ 150°C (TJ)
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Mounting Type
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Through Hole
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Supplier Device Package
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TO-39
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Package / Case
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TO-205AD, TO-39-3 Metal Can
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In-Stock: 184
Can ship immediately
Quantity
For Use With
