2SJ655

Manufacturer
Manufacturer Product Number
2SJ655
Description
MOSFET P-CH 100V 12A TO220ML
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
2SJ655 Models
Product Attributes
Type
Description
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
136mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
41 nC @ 10 V
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
2090 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
2W (Ta), 25W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220ML
Package / Case
TO-220-3 Full Pack
In-Stock: 179,800
Can ship immediately
All prices are in USD
Cut Tape (CT) & Digi-Reel®
Quantity Unit Price Ext Price