NTD4969N-1G

Manufacturer
Manufacturer Product Number
NTD4969N-1G
Description
MOSFET N-CH 30V 41A IPAK-4
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
NTD4969N-1G Models
Product Attributes
Type
Description
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
9.4A (Ta), 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9 nC @ 4.5 V
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
837 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Through Hole
Supplier Device Package
I-PAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
In-Stock: 7,948
Can ship immediately
All prices are in USD
Cut Tape (CT) & Digi-Reel®
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