Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
QJD1210010 |
|
|---|---|
|
Manufacturer
|
|
|
Manufacturer Product Number
|
QJD1210010
|
|
Description
|
MOSFET 2N-CH 1200V 100A SIC
|
|
Manufacturer Standard Lead Time
|
7 Weeks
|
|
Detailed Description
|
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
|
|
Datasheet
|
Datasheet |
|
EDA/CAD Models
|
QJD1210010 Models |
Product Attributes
|
Type
|
Description
|
|
|---|---|---|
|
Product Status
|
Active
|
|
|
FET Type
|
2 N-Channel (Dual)
|
|
|
FET Feature
|
Silicon Carbide (SiC)
|
|
|
Drain to Source Voltage (Vdss)
|
1200V (1.2kV)
|
|
|
Current - Continuous Drain (Id) @ 25°C
|
100A (Tc)
|
|
|
Rds On (Max) @ Id, Vgs
|
25mOhm @ 100A, 20V
|
|
|
Vgs(th) (Max) @ Id
|
5V @ 10mA
|
|
|
Gate Charge (Qg) (Max) @ Vgs
|
500nC @ 20V
|
|
|
Input Capacitance (Ciss) (Max) @ Vds
|
10200pF @ 800V
|
|
|
Power - Max
|
1080W
|
|
|
Operating Temperature
|
-40°C ~ 175°C (TJ)
|
|
|
Mounting Type
|
Chassis Mount
|
|
|
Package / Case
|
Module
|
|
|
Supplier Device Package
|
Module
|
In-Stock: Contact for stock
Can ship immediately
Quantity
For Use With
