Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
RM4P20ES6 |
|
|---|---|
|
Manufacturer
|
|
|
Manufacturer Product Number
|
RM4P20ES6
|
|
Description
|
MOSFET P-CH 20V 3A/4.1A SOT23-6
|
|
Manufacturer Standard Lead Time
|
7 Weeks
|
|
Detailed Description
|
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
|
|
Datasheet
|
Datasheet |
|
EDA/CAD Models
|
RM4P20ES6 Models |
Product Attributes
|
Type
|
Description
|
|
|---|---|---|
|
Product Status
|
Active
|
|
|
FET Type
|
P-Channel
|
|
|
Technology
|
MOSFET (Metal Oxide)
|
|
|
Drain to Source Voltage (Vdss)
|
20 V
|
|
|
Current - Continuous Drain (Id) @ 25°C
|
3A (Ta), 4.1A (Tc)
|
|
|
Drive Voltage (Max Rds On, Min Rds On)
|
2.5V, 4.5V
|
|
|
Rds On (Max) @ Id, Vgs
|
52mOhm @ 4.1A, 4.5V
|
|
|
Vgs(th) (Max) @ Id
|
1V @ 250µA
|
|
|
Gate Charge (Qg) (Max) @ Vgs
|
-
|
|
|
Vgs (Max)
|
±12V
|
|
|
Input Capacitance (Ciss) (Max) @ Vds
|
740 pF @ 4 V
|
|
|
FET Feature
|
-
|
|
|
Power Dissipation (Max)
|
1.7W (Ta)
|
|
|
Operating Temperature
|
-55°C ~ 150°C (TJ)
|
|
|
Mounting Type
|
Surface Mount
|
|
|
Supplier Device Package
|
SOT-23-6
|
|
|
Package / Case
|
SOT-23-6
|
In-Stock: Contact for stock
Can ship immediately
Quantity
For Use With
