RM5N800HD

Manufacturer
Manufacturer Product Number
RM5N800HD
Description
MOSFET N-CHANNEL 800V 5A TO263-2
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
RM5N800HD Models
Product Attributes
Type
Description
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.2Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1320 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
98W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263-2
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In-Stock: 7,948
Can ship immediately
All prices are in USD
Cut Tape (CT) & Digi-Reel®
Quantity Unit Price Ext Price