Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
RMD1N25ES9 |
|
|---|---|
|
Manufacturer
|
|
|
Manufacturer Product Number
|
RMD1N25ES9
|
|
Description
|
MOSFET N-CHANNEL 25V 1.1A SOT363
|
|
Manufacturer Standard Lead Time
|
7 Weeks
|
|
Detailed Description
|
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
|
|
Datasheet
|
Datasheet |
|
EDA/CAD Models
|
RMD1N25ES9 Models |
Product Attributes
|
Type
|
Description
|
|
|---|---|---|
|
Product Status
|
Active
|
|
|
FET Type
|
N-Channel
|
|
|
Technology
|
MOSFET (Metal Oxide)
|
|
|
Drain to Source Voltage (Vdss)
|
25 V
|
|
|
Current - Continuous Drain (Id) @ 25°C
|
1.1A (Ta)
|
|
|
Drive Voltage (Max Rds On, Min Rds On)
|
2.5V, 4.5V
|
|
|
Rds On (Max) @ Id, Vgs
|
600mOhm @ 500mA, 4.5V
|
|
|
Vgs(th) (Max) @ Id
|
1.1V @ 250µA
|
|
|
Gate Charge (Qg) (Max) @ Vgs
|
-
|
|
|
Vgs (Max)
|
±12V
|
|
|
Input Capacitance (Ciss) (Max) @ Vds
|
30 pF @ 10 V
|
|
|
FET Feature
|
-
|
|
|
Power Dissipation (Max)
|
800mW (Ta)
|
|
|
Operating Temperature
|
-55°C ~ 150°C (TJ)
|
|
|
Mounting Type
|
Surface Mount
|
|
|
Supplier Device Package
|
SOT-363
|
|
|
Package / Case
|
6-TSSOP, SC-88, SOT-363
|
In-Stock: Contact for stock
Can ship immediately
Quantity
For Use With
