NP50P06SDG-E1-AY

Manufacturer
Manufacturer Product Number
NP50P06SDG-E1-AY
Description
MOSFET P-CH 60V 50A TO-252
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
NP50P06SDG-E1-AY Models
Product Attributes
Type
Description
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
16.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
100 nC @ 10 V
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
5000 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1.2W (Ta), 84W (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252 (MP-3ZK)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
In-Stock: 7,948
Can ship immediately
All prices are in USD
Cut Tape (CT) & Digi-Reel®
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