UPA2810T1L-E2-AY

Manufacturer
Manufacturer Product Number
UPA2810T1L-E2-AY
Description
MOSFET P-CH 30V 13A 8DFN
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
UPA2810T1L-E2-AY Models
Product Attributes
Type
Description
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
13A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
12mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
1860 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1.5W (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-DFN3333 (3.3x3.3)
Package / Case
8-VDFN Exposed Pad
In-Stock: 7,948
Can ship immediately
All prices are in USD
Cut Tape (CT) & Digi-Reel®
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