SCT040H65G3AG

Manufacturer
Manufacturer Product Number
SCT040H65G3AG
Description
AUTOMOTIVE-GRADE SILICON CARBIDE
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
SCT040H65G3AG Models
Product Attributes
Type
Description
Product Status
Active
FET Type
N-Channel
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
55mOhm @ 20A, 18V
Vgs(th) (Max) @ Id
4.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
39.5 nC @ 18 V
Vgs (Max)
+18V, -5V
Input Capacitance (Ciss) (Max) @ Vds
920 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
221W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
H2PAK-7
Package / Case
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
In-Stock: 150
Can ship immediately
All prices are in USD
Cut Tape (CT) & Digi-Reel®
Quantity Unit Price Ext Price