SCTW100N65G2AG

Manufacturer
Manufacturer Product Number
SCTW100N65G2AG
Description
SICFET N-CH 650V 100A HIP247
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
SCTW100N65G2AG Models
Product Attributes
Type
Description
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
26mOhm @ 50A, 18V
Vgs(th) (Max) @ Id
5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
162 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
3315 pF @ 520 V
FET Feature
-
Power Dissipation (Max)
420W (Tc)
Operating Temperature
-55°C ~ 200°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
HiP247™
Package / Case
TO-247-3
In-Stock: 7,948
Can ship immediately
All prices are in USD
Cut Tape (CT) & Digi-Reel®
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