Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
TW083N65C,S1F |
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Manufacturer
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Manufacturer Product Number
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TW083N65C,S1F
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Description
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G3 650V SIC-MOSFET TO-247 83MOH
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Manufacturer Standard Lead Time
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7 Weeks
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Detailed Description
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Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
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Datasheet
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Datasheet |
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EDA/CAD Models
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TW083N65C,S1F Models |
Product Attributes
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Type
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Description
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Product Status
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Active
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FET Type
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N-Channel
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Technology
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SiC (Silicon Carbide Junction Transistor)
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Drain to Source Voltage (Vdss)
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650 V
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Current - Continuous Drain (Id) @ 25°C
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30A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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18V
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Rds On (Max) @ Id, Vgs
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113mOhm @ 15A, 18V
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Vgs(th) (Max) @ Id
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5V @ 600µA
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Gate Charge (Qg) (Max) @ Vgs
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28 nC @ 18 V
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Vgs (Max)
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+25V, -10V
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Input Capacitance (Ciss) (Max) @ Vds
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873 pF @ 400 V
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FET Feature
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-
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Power Dissipation (Max)
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111W (Tc)
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Operating Temperature
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175°C
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Mounting Type
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Through Hole
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Supplier Device Package
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TO-247
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Package / Case
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TO-247-3
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In-Stock: 7,948
Can ship immediately
Quantity
All prices are
in USD
Cut Tape (CT) & Digi-Reel®
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For Use With
