XPN12006NC,L1XHQ

Manufacturer
Manufacturer Product Number
XPN12006NC,L1XHQ
Description
MOSFET N-CH 60V 20A 8TSON
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
XPN12006NC,L1XHQ Models
Product Attributes
Type
Description
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
20A
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.5V @ 0.2mA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1100 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
65W (Tc)
Operating Temperature
-55°C ~ 175°C
Mounting Type
Surface Mount
Supplier Device Package
8-TSON Advance-WF (3.1x3.1)
Package / Case
8-PowerVDFN
In-Stock: 7,948
Can ship immediately
All prices are in USD
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