Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
TP65H035G4WS |
|
|---|---|
|
Manufacturer
|
|
|
Manufacturer Product Number
|
TP65H035G4WS
|
|
Description
|
GANFET N-CH 650V 46.5A TO247-3
|
|
Manufacturer Standard Lead Time
|
7 Weeks
|
|
Detailed Description
|
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
|
|
Datasheet
|
Datasheet |
|
EDA/CAD Models
|
TP65H035G4WS Models |
Product Attributes
|
Type
|
Description
|
|
|---|---|---|
|
Product Status
|
Active
|
|
|
FET Type
|
N-Channel
|
|
|
Technology
|
GaNFET (Cascode Gallium Nitride FET)
|
|
|
Drain to Source Voltage (Vdss)
|
650 V
|
|
|
Current - Continuous Drain (Id) @ 25°C
|
46.5A (Tc)
|
|
|
Drive Voltage (Max Rds On, Min Rds On)
|
10V
|
|
|
Rds On (Max) @ Id, Vgs
|
41mOhm @ 30A, 10V
|
|
|
Vgs(th) (Max) @ Id
|
4.8V @ 1mA
|
|
|
Gate Charge (Qg) (Max) @ Vgs
|
22 nC @ 0 V
|
|
|
Vgs (Max)
|
±20V
|
|
|
Input Capacitance (Ciss) (Max) @ Vds
|
1500 pF @ 400 V
|
|
|
FET Feature
|
-
|
|
|
Power Dissipation (Max)
|
156W (Tc)
|
|
|
Operating Temperature
|
-55°C ~ 150°C
|
|
|
Mounting Type
|
Through Hole
|
|
|
Supplier Device Package
|
TO-247-3
|
|
|
Package / Case
|
TO-247-3
|
In-Stock: 761
Can ship immediately
Quantity
For Use With
