SI1926DL-T1-GE3

Manufacturer
Manufacturer Product Number
SI1926DL-T1-GE3
Description
MOSFET 2N-CH 60V 0.37A SOT363
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
SI1926DL-T1-GE3 Models
Product Attributes
Type
Description
Product Status
Active
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
370mA
Rds On (Max) @ Id, Vgs
1.4Ohm @ 340mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
18.5pF @ 30V
Power - Max
510mW
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
SC-70-6
In-Stock: 7,948
Can ship immediately
All prices are in USD
Cut Tape (CT) & Digi-Reel®
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