SI4931DY-T1-GE3

Manufacturer
Manufacturer Product Number
SI4931DY-T1-GE3
Description
MOSFET 2P-CH 12V 6.7A 8SOIC
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
SI4931DY-T1-GE3 Models
Product Attributes
Type
Description
Product Status
Active
FET Type
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
12V
Current - Continuous Drain (Id) @ 25°C
6.7A
Rds On (Max) @ Id, Vgs
18mOhm @ 8.9A, 4.5V
Vgs(th) (Max) @ Id
1V @ 350µA
Gate Charge (Qg) (Max) @ Vgs
52nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
1.1W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
In-Stock: 7,948
Can ship immediately
All prices are in USD
Cut Tape (CT) & Digi-Reel®
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