SI7900AEDN-T1-E3

Manufacturer
Manufacturer Product Number
SI7900AEDN-T1-E3
Description
MOSFET 2N-CH 20V 6A 1212-8
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
SI7900AEDN-T1-E3 Models
Product Attributes
Type
Description
Product Status
Active
FET Type
2 N-Channel (Dual) Common Drain
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
6A
Rds On (Max) @ Id, Vgs
26mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
1.5W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8 Dual
Supplier Device Package
PowerPAK® 1212-8 Dual
In-Stock: 7,948
Can ship immediately
All prices are in USD
Cut Tape (CT) & Digi-Reel®
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