Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SIHH21N65E-T1-GE3 |
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Manufacturer
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Manufacturer Product Number
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SIHH21N65E-T1-GE3
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Description
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MOSFET N-CH 650V 20.3A PPAK 8X8
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Manufacturer Standard Lead Time
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7 Weeks
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Detailed Description
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Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
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Datasheet
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Datasheet |
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EDA/CAD Models
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SIHH21N65E-T1-GE3 Models |
Product Attributes
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Type
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Description
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Product Status
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Active
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FET Type
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N-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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650 V
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Current - Continuous Drain (Id) @ 25°C
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20.3A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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10V
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Rds On (Max) @ Id, Vgs
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170mOhm @ 11A, 10V
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Vgs(th) (Max) @ Id
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4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
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99 nC @ 10 V
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Vgs (Max)
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±30V
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Input Capacitance (Ciss) (Max) @ Vds
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2404 pF @ 100 V
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FET Feature
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-
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Power Dissipation (Max)
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156W (Tc)
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Operating Temperature
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-55°C ~ 150°C (TJ)
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Mounting Type
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Surface Mount
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Supplier Device Package
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PowerPAK® 8 x 8
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Package / Case
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8-PowerTDFN
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In-Stock: Contact for stock
Can ship immediately
Quantity
For Use With
