SIR178DP-T1-RE3

Manufacturer
Manufacturer Product Number
SIR178DP-T1-RE3
Description
MOSFET N-CH 20V 100A/430A PPAK
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
SIR178DP-T1-RE3 Models
Product Attributes
Type
Description
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
100A (Ta), 430A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
Rds On (Max) @ Id, Vgs
0.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
310 nC @ 10 V
Vgs (Max)
+12V, -8V
Input Capacitance (Ciss) (Max) @ Vds
12430 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
6.3W (Ta), 104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
In-Stock: Contact for stock
Can ship immediately
All prices are in USD
Cut Tape (CT) & Digi-Reel®
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