SIS903DN-T1-GE3

Manufacturer
Manufacturer Product Number
SIS903DN-T1-GE3
Description
MOSFET DUAL P-CHAN POWERPAK 1212
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
SIS903DN-T1-GE3 Models
Product Attributes
Type
Description
Product Status
Active
FET Type
2 P-Channel (Dual)
FET Feature
Standard
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Rds On (Max) @ Id, Vgs
20.1mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
2565pF @ 10V
Power - Max
2.6W (Ta), 23W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8 Dual
Supplier Device Package
PowerPAK® 1212-8 Dual
In-Stock: 7,948
Can ship immediately
All prices are in USD
Cut Tape (CT) & Digi-Reel®
Quantity Unit Price Ext Price