SISA04DN-T1-GE3

Manufacturer
Manufacturer Product Number
SISA04DN-T1-GE3
Description
MOSFET N-CH 30V 40A PPAK1212-8
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
SISA04DN-T1-GE3 Models
Product Attributes
Type
Description
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.15mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
77 nC @ 10 V
Vgs (Max)
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds
3595 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
3.7W (Ta), 52W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
In-Stock: 7,948
Can ship immediately
All prices are in USD
Cut Tape (CT) & Digi-Reel®
Quantity Unit Price Ext Price