Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SISH892BDN-T1-GE3 |
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Manufacturer
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Manufacturer Product Number
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SISH892BDN-T1-GE3
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Description
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N-CHANNEL 100 V (D-S) MOSFET POW
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Manufacturer Standard Lead Time
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7 Weeks
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Detailed Description
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Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
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Datasheet
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Datasheet |
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EDA/CAD Models
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SISH892BDN-T1-GE3 Models |
Product Attributes
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Type
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Description
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Product Status
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Active
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FET Type
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N-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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100 V
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Current - Continuous Drain (Id) @ 25°C
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6.8A (Ta), 20A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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4.5V, 10V
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Rds On (Max) @ Id, Vgs
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30.4mOhm @ 10A, 10V
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Vgs(th) (Max) @ Id
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2.4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
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26.5 nC @ 10 V
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) @ Vds
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1110 pF @ 50 V
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FET Feature
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-
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Power Dissipation (Max)
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3.4W (Ta), 29W (Tc)
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Operating Temperature
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-55°C ~ 150°C (TJ)
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Mounting Type
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Surface Mount
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Supplier Device Package
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PowerPAK® SO-8DC
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Package / Case
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PowerPAK® SO-8
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In-Stock: Contact for stock
Can ship immediately
Quantity
For Use With
