SIZ200DT-T1-GE3

Manufacturer
Manufacturer Product Number
SIZ200DT-T1-GE3
Description
MOSFET N-CH DUAL 30V
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
SIZ200DT-T1-GE3 Models
Product Attributes
Type
Description
Product Status
Active
FET Type
2 N-Channel (Dual)
FET Feature
Standard
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs
5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
28nC @ 10V, 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1510pF @ 15V, 1600pF @ 15V
Power - Max
4.3W (Ta), 33W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Supplier Device Package
8-PowerPair® (3.3x3.3)
In-Stock: 7,948
Can ship immediately
All prices are in USD
Cut Tape (CT) & Digi-Reel®
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