SQJ570EP-T1_BE3

Manufacturer
Manufacturer Product Number
SQJ570EP-T1_BE3
Description
N- AND P-CHANNEL 100-V (D-S) 175
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
SQJ570EP-T1_BE3 Models
Product Attributes
Type
Description
Product Status
Active
FET Type
N and P-Channel
FET Feature
Standard
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
15A (Tc), 9.5A (Tc)
Rds On (Max) @ Id, Vgs
45mOhm @ 6A, 10V, 146mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15nC @ 10V, 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
600pF @ 25V, 650pF @ 25V
Power - Max
27W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8 Dual
Supplier Device Package
PowerPAK® SO-8 Dual
In-Stock: 7,948
Can ship immediately
All prices are in USD
Cut Tape (CT) & Digi-Reel®
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