VQ1006P-E3

Manufacturer
Manufacturer Product Number
VQ1006P-E3
Description
MOSFET 4N-CH 90V 0.4A 14DIP
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
VQ1006P-E3 Models
Product Attributes
Type
Description
Product Status
Obsolete
FET Type
4 N-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
90V
Current - Continuous Drain (Id) @ 25°C
400mA
Rds On (Max) @ Id, Vgs
4.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
60pF @ 25V
Power - Max
2W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
-
Supplier Device Package
14-DIP
In-Stock: Contact for stock
Can ship immediately
All prices are in USD
Cut Tape (CT) & Digi-Reel®
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