Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
WNSC2D04650TJ |
|
|---|---|
|
Manufacturer
|
|
|
Manufacturer Product Number
|
WNSC2D04650TJ
|
|
Description
|
SILICON CARBIDE SCHOTTKY DIODE
|
|
Manufacturer Standard Lead Time
|
7 Weeks
|
|
Detailed Description
|
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
|
|
Datasheet
|
Datasheet |
|
EDA/CAD Models
|
WNSC2D04650TJ Models |
Product Attributes
|
Type
|
Description
|
|
|---|---|---|
|
Product Status
|
Active
|
|
|
Diode Type
|
Silicon Carbide Schottky
|
|
|
Voltage - DC Reverse (Vr) (Max)
|
650 V
|
|
|
Current - Average Rectified (Io)
|
4A
|
|
|
Voltage - Forward (Vf) (Max) @ If
|
1.7 V @ 4 A
|
|
|
Speed
|
No Recovery Time > 500mA (Io)
|
|
|
Reverse Recovery Time (trr)
|
0 ns
|
|
|
Current - Reverse Leakage @ Vr
|
20 µA @ 650 V
|
|
|
Capacitance @ Vr, F
|
125pF @ 1V, 1MHz
|
|
|
Mounting Type
|
Surface Mount
|
|
|
Package / Case
|
4-VSFN Exposed Pad
|
|
|
Supplier Device Package
|
5-DFN (8x8)
|
|
|
Operating Temperature - Junction
|
175°C
|
In-Stock: 14,959
Can ship immediately
Quantity
For Use With
